VLSI and Post-CMOS Electronics Devices, Circuits and Interconnects (Vol – 2)
Original price was: ₹12,924.00.₹10,339.20Current price is: ₹10,339.20.
ISBN: 9781839530531
Author/Editor: Rohit Dhiman
Publisher: IET
Year: 2019
1 in stock (can be backordered)
Description
VLSI, or Very-Large-Scale-Integration, is the practice of combining billions of transistors to create an integrated circuit. At present, VLSI circuits are realised using CMOS technology. However, the demand for ever smaller, more efficient circuits is now pushing the limits of CMOS. Post-CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits. This 2-volume set addresses the current state of the art in VLSI technologies and presents potential options for post-CMOS processes.
VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits. Volume 1 focuses on design, modelling and simulation, including applications in low voltage and low power VLSI, and post-CMOS devices and circuits. Volume 2 addresses a wide range of devices, circuits and interconnects.
Additional information
| Weight | 0.82 kg |
|---|
Product Properties
| Year of Publication | 2019 |
|---|---|
| Table of Contents | Section I: High-performance compound semiconductor devices and applications Chapter 1: III-V compound semiconductor transistors - from planar to nanowire structures Chapter 2: UTB III-V-OI-Si MOS transistor: the future transistor for VLSI design Chapter 3: Assessment of SiGe/Si heterojunction tunnel field-effect transistor for digital VLSI circuit applications Chapter 4: Simulation framework for GaN devices with special mention to reliability concern Section II: Process variability in FinFETs: challenges and mitigation Chapter 5: Impact of oxide thickness variation on the performance of junctionless FinFET Chapter 6: Design and analysis of variability aware FinFET-based SRAM circuit design Section III: Through silicon via interconnects for three-dimensional integration Chapter 7: Modelling interconnects for future VLSI circuit applications Chapter 8: Nanomagnetic computing for next generation interconnects and logic design Chapter 9: Prospective current mode approach for on-chip interconnects in integrated circuit designs Chapter 10: Design of through silicon vias for improved performance in 3D IC applications Chapter 11: Prospective graphene-based through silicon vias in three-dimensional integrated circuits Section IV: Emerging technologies for integrated circuits Chapter 12: Radiation hard circuit design: flip-flop and SRAM Chapter 13: Phase change memory: electrical circuit modelling, nanocrossbar performance analysis and applications Chapter 14: Methods to design ternary gates and adders Chapter 15: Single EXCCII based square/triangular wave generator for capacitive sensor interfacing and brief review Chapter 16: Transient fault secured/tolerant architecture for DSP core |
| Author | Rohit Dhiman |
| ISBN/ISSN | 9781839530531 |
| Binding | Hardback |
| Edition | 1 |
| Publisher | IET |
You must be logged in to post a review.
Reviews
There are no reviews yet.